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首页> 外文期刊>Materials Science and Engineering >Effect of Nd~(3+) incorporation on the microstructure and chemical structure of RF sputtered ZnO thin films
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Effect of Nd~(3+) incorporation on the microstructure and chemical structure of RF sputtered ZnO thin films

机译：Nd〜（3+）掺入对RF溅射ZnO薄膜微观结构和化学结构的影响

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摘要

The present work aims at investigating the effects that different levels of Nd atoms incorporation can have on the microstructure and chemical structure of ZnO thin films. Undoped and Nd-doped ZnO films were deposited by RF co-sputtering from pure ZnO and metallic Nd targets in Ar plasma onto Si, quartz and glass substrates. The Nd concentration in the ZnO host matrix was varied in the range 0-26 at.% by varying the bias applied to the Nd target. A comprehensive characterization of the films properties was performed by X-ray photoelectron and Auger electron spectroscopies, X-ray fluorescence analysis, X-ray diffraction and scanning electron microscopy. At low Nd atomic concentration (Nd/Zn＜0.07) Nd atoms were successfully incorporated into the ZnO matrix, whose crystalline structure was preserved. A deterioration of the ZnO wuertzite phase was observed on the contrary with increasing Nd content in the films together with the precipitation of a second phase, identified as Nd_2O_3.
机译：本工作旨在研究不同水平的Nd原子掺入对ZnO薄膜的微观结构和化学结构的影响。通过RF共溅射将纯ZnO和金属Nd靶材在Ar等离子体中进行RF共溅射，将未掺杂和Nd掺杂的ZnO膜沉积到Si，石英和玻璃基板上。通过改变施加到Nd靶上的偏压，ZnO主体基质中的Nd浓度在0-26原子％的范围内变化。通过X射线光电子和俄歇电子能谱，X射线荧光分析，X射线衍射和扫描电子显微镜对薄膜的性能进行了全面表征。在低Nd原子浓度下（Nd / Zn ＜0.07），Nd原子成功地掺入了ZnO基体中，其晶体结构得以保留。相反，观察到ZnO纤锌矿相的劣化，这与膜中Nd含量的增加以及第二相（Nd_2O_3）的析出有关。

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  • 来源
    《Materials Science and Engineering》 |2013年第9期|609-616|共8页
  • 作者

    Gloria Gottardi; Rajesh Pandiyan; Victor Micheli; Giancarlo Pepponi; Salvatore Gennaro; Ruben Bartali; Nadhira Laidani;

  • 作者单位

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy ,University of Trento, Physics Department, Via Sommarive 14, 38123 Trento, Italy ,LGPPTS, ENSCP, Universite Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75005 Paris, France;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

    Fondazione Bruno Kessler, Center for Materials and Microsystems, Via Sommarive 18, 38123 Trento, Italy;

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  • 正文语种 eng
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  • 关键词

    Rare earth doping; ZnO thin films; XRD; Neodymium; AES; XPS;

    机译：稀土掺杂;ZnO薄膜;XRD;钕;AES;XPS;

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