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机译:通过射频磁控溅射以不同的N_2 / Ar气体流量比沉积的BCN膜的光学表征
Department of Electrical Engineering and Computer Science. University of Central Florida, Orlando. FL 32816. United States;
Department of Electrical Engineering and Computer Science. University of Central Florida, Orlando. FL 32816. United States;
Department of Electrical Engineering and Computer Science. University of Central Florida, Orlando. FL 32816. United States;
Department of Electrical Engineering and Computer Science. University of Central Florida, Orlando. FL 32816. United States;
Advanced Materials Processing and Analysis Center, University of Central Florida. Orlando, FL 32816, United States;
Sputtering; BCN; Optical properties; Band gap;
机译:在各种O-2 / Ar流量比下RF平面磁控溅射沉积的Gazo薄膜的光学性质
机译:衬底和Ar / N_2气体流量比对DC磁控溅射合成TiN薄膜的结构,光学和电学性质的影响
机译:在受控N_2 / Ar气氛中改善反应性RF磁控溅射沉积CuCrO_2薄膜的电学和光学性能
机译:磁控溅射等离子体中不同O2 / Ar流量比沉积的氧化锌薄膜的结构表征
机译:射频反应磁控溅射在低温下沉积在硅上的压电氮化铝薄膜的声波器件特性
机译:射频磁控溅射在不同N2 / Ar气体流量下生长的Zn3N2薄膜的XPS深度剖面分析
机译:O