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Properties of doped ZnO thin films grown by simultaneous dc and RF magnetron sputtering

机译:直流和射频磁控溅射同时生长的掺杂ZnO薄膜的性能

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摘要

Doped ZnO films such as Cu- and Ag-doped with different at.% have been grown using simultaneous RF magnetron sputtering of ZnO and dc sputtering of Cu and Ag. The structural, electrical and optical properties of the films are investigated using different characterization tools. It is observed that both films show different surface morphologies with preferential crystalline growth orientation along (002). More significantly Ag-doped ZnO film show low resistance and high transmittance than that of Cu-doped film of same thickness and doped content. ZnO film doped with 2 at.% Cu shows high resistivity of the order 10~8 Ω cm.
机译:使用同时的ZnO射频磁控溅射和Cu和Ag的直流溅射已经生长了掺杂不同原子百分比的掺杂ZnO薄膜,例如铜和银。使用不同的表征工具研究了薄膜的结构,电学和光学性质。观察到两个膜都显示出不同的表面形态,并沿着(002)出现了优先的晶体生长取向。与相同厚度和掺杂量的铜掺杂薄膜相比,银掺杂ZnO薄膜显示出低电阻和高透射率。掺杂2 at。%Cu的ZnO膜显示出约10〜8Ωcm的高电阻率。

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