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首页> 外文期刊>Materials Science and Engineering >Structural and optical properties of silicon quantum dots in silicon nitride grown in situ by PECVD using different gas precursors
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Structural and optical properties of silicon quantum dots in silicon nitride grown in situ by PECVD using different gas precursors

机译：使用不同气体前体通过PECVD原位生长的氮化硅中硅量子点的结构和光学性质

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A low temperature in situ approach for growing silicon nanostructures in silicon nitride is investigated, as a powerful method of implementing third generation photovoltaic concepts within classical thin film silicon solar cell architectures on low cost substrates. Evidence of spontaneous aggregation of silicon quantum dots in silicon nitride films deposited by plasma enhanced chemical vapour deposition (PFXVD) at low temperature (300 C) is reported. Two different types of samples are studied, grown using two gas mixtures, composed of silane and nitrogen with and without ammonia. The film microstructure is analysed through Raman spectroscopy. Visible photoluminescence (PL) is observed in all cases, and tuning of PL emission is demonstrated by adjusting the gas flow rates. As an effect of the extra hydrogen available through the dissociation of NH_3, much stronger PL is observed on samples grown with ammonia. Similar optical absorption spectra are found for the two types of samples, with the rising edge dominated by the absorption in Si nanoclusters.
机译：研究了一种在氮化硅中生长硅纳米结构的低温原位方法，这是一种在低成本衬底上的经典薄膜硅太阳能电池架构中实施第三代光伏概念的有效方法。报道了在低温（300 C）下通过等离子体增强化学气相沉积（PFXVD）沉积的氮化硅膜中硅量子点的自发聚集的证据。研究了两种不同类型的样品，使用两种气体混合物（由硅烷和氮气以及有无氨组成）进行生长。通过拉曼光谱分析膜的微观结构。在所有情况下均观察到可见光致发光（PL），并通过调节气体流速来演示PL发射的调整。由于通过NH_3的解离可得到额外的氢，在用氨水生长的样品上观察到了更强的PL。对于两种类型的样品，发现了相似的光学吸收光谱，其上升沿主要由Si纳米团簇的吸收所决定。

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