Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

著录项

• 来源
  《Materials Science and Engineering》 |2009年第2009期|145-148|共4页
• 作者

  Yuheng Zeng; Deren Yang; Xiangyang Ma; Jiahe Chen; Duanlin Que;

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• 作者单位

  State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  heavily doped czochralski silicon; phosphorus; oxygen precipitation;

  机译：重掺杂czochralski硅;磷;氧气沉淀;