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首页> 外文期刊>Materials Science and Engineering >Sol-gel ZrO_2 and ZrO_2-Al_2O_3 nanocrystalline thin films on Si as high-k dielectrics
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Sol-gel ZrO_2 and ZrO_2-Al_2O_3 nanocrystalline thin films on Si as high-k dielectrics

机译:硅上的溶胶凝胶ZrO_2和ZrO_2-Al_2O_3纳米晶薄膜作为高k电介质

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摘要

Currently, the conventional dielectric, SiO_2 or SiON is being replaced by alternative materials to suppress high leakage currents observed at low film thickness. In this work, thin layers of ZrO_2 and (ZrO_2)_x(Al_2O_3)_(1-x), deposited on Si substrates are obtained by sol-gel method. The structural and electrical properties as a function of the annealing temperature are studied. Usually, the post-annealing temperature of 700 ℃ leads to re-crystallization in ZrO_2 layers, which can induce high leakage current and severe mass transport along the grain boundaries. The purpose is to amorphisize the films by adding aluminium oxide and in this way improve their electrical behaviour. Structural analysis shows that ZrO_2 films are crystallized, meanwhile the mixed oxide films remain in amorphous state even after high temperature annealing. The obtained results are encouraging and determine the (ZrO_2)_x(Al_2O_3)_(1-x) films as a promising material with good dielectric properties.
机译:当前,常规电介质,SiO_2或SiON被替代材料替代,以抑制在低膜厚度下观察到的高漏电流。在这项工作中,通过溶胶-凝胶法获得了沉积在Si衬底上的ZrO_2和(ZrO_2)_x(Al_2O_3)_(1-x)薄层。研究了作为退火温度的函数的结构和电性能。通常,700℃的后退火温度会导致ZrO_2层中的再结晶,这会引起高漏电流和沿晶界的大量质量传输。目的是通过添加氧化铝使薄膜非晶化,并以此方式改善其电性能。结构分析表明,ZrO_2薄膜是结晶的,而混合氧化物薄膜即使经过高温退火也保持非晶态。获得的结果令人鼓舞,并且确定了(ZrO_2)_x(Al_2O_3)_(1-x)膜是具有良好介电性能的有前途的材料。

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  • 来源
    《Materials Science and Engineering》 |2009年第3期|178-181|共4页
  • 作者单位

    Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria;

    Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria;

    Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria;

    Demokritos National Centre for Scientific Research, Athens, Greece;

    Demokritos National Centre for Scientific Research, Athens, Greece;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    aluminium oxide; sol-gel processing; electrical properties; XRn;

    机译:氧化铝溶胶-凝胶加工;电性能;XRn;

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