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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Ga-doped ZnO thin films: Effect of deposition temperature, dopant concentration, and vacuum-thermal treatment on the electrical, optical, structural and morphological properties
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Ga-doped ZnO thin films: Effect of deposition temperature, dopant concentration, and vacuum-thermal treatment on the electrical, optical, structural and morphological properties

机译：Ga掺杂的ZnO薄膜：沉积温度，掺杂剂浓度和真空热处理对电，光学，结构和形态特性的影响

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摘要

Transparent conductive Ga-doped Zn oxide (ZnO:Ga), thin films were prepared by the chemical spray technique using Zn acetate and Ga pentanedionate as precursors of Zn and Ga, respectively. The effect of the deposition temperature, T_s, dopant concentration [Ga/Zn], and a vacuum-annealing treatment on the physical properties of the ZnO:Ga thin films was analyzed. The electrical and optical properties were characterized through sheet resistance measurements, Hall effect, and optical transmittance in the UV-visible range. The structure and morphology were analyzed by XRD and SEM, respectively. A minimum electrical resistivity value, on the order of 7.4 x 10~(-3) Ω cm was obtained under the optimal deposition conditions (T_s=425℃), [Ga/Zn] =2at.%). The crystallite size ranged from 18 to 28 nm depending on the deposition temperature. An optical transparency on the order of 80%, and roughness values between 24 and 62 nm were estimated.
机译：通过化学喷涂技术，分别使用乙酸锌和戊二酸镓作为Zn和Ga的前体，通过化学喷涂技术制备了透明的掺杂Ga的导电Zn薄膜（ZnO：Ga）。分析了沉积温度，T_s，掺杂剂浓度[Ga / Zn]和真空退火处理对ZnO：Ga薄膜物理性能的影响。通过薄层电阻测量，霍尔效应和紫外可见光范围内的透光率来表征电和光学性能。分别通过XRD和SEM分析其结构和形态。在最佳沉积条件下（T_s = 425℃，[Ga / Zn] = 2at。％），得到的最小电阻率为7.4 x 10〜（-3）Ωcm。取决于沉积温度，微晶尺寸为18至28nm。估计光学透明度约为80％，粗糙度值介于24和62 nm之间。

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