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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates
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XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates

机译：在Si（001）衬底上通过混合外延生长的松弛SiGe梯度缓冲液上的应变Ge-SiGe异质结构的XRD分析

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摘要

Ge/Si_(1-x)Ge_x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650℃ for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x=0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2nm)-SiGe(20 nm)-Ge-SiGe(15nm + 5nm B-doped + 20nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T= 350℃. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (～ 1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments.
机译：采用混合外延生长方法生长了Ge / Si_（1-x）Ge_x掺杂调制的异质结构，其Ge沟道厚度分别为16nm和20nm，然后在650℃进行异位退火，用于p-HMOS。通过超高真空化学气相沉积（UHV-CVD）生产了虚拟衬底的较厚层（6000 nm的xGe直至x = 0.6的SiGe和1000 nm的均匀成分x = 0.6），而较薄的Si（2nm）-SiGe在T = 350℃下通过低温固体源（LT-SS）MBE生长了（20 nm）-Ge-SiGe（15nm + 5nm B掺杂+ 20nm）有源层。通过X射线衍射（XRD）测量生长和退火后的样品。倒数空间图（RSMs）使我们能够无损地确定Ge通道的精确组成（〜1％）和应变，以及有关组成整个结构的其他层的类似信息。层厚通过互补的高分辨率卢瑟福背散射（RBS）实验确定。

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