...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine
【24h】

Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine

机译：磷化氢在气相表面吸附后磷扩散到硅中

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Shallow phosphorus doping of silicon was carried out by using a damage-free two-step doping process. Phosphorus was deposited on to the silicon surface by self-limited dissociative adsorption of phosphine from the gas phase. Diffusion and activation of the phosphorus was performed by succeeding conventional rapid thermal lamp annealing in a low pressure oxygen atmosphere. Different deposition and annealing conditions, as well as the influence of the oxide coverage were investigated. The sheet resistance, the oxide thickness, and the phosphorus concentration were analysed by four point probe measurements, ellipsometry, and secondary ion mass spectroscopy (SIMS), respectively. Annealing at different temperatures above 850℃ for 10s resulted in junction depths of 55 nm to 126 nm with sheet resistances of 1150 to 620 Ω/sq., respectively. The SIMS measurements revealed a Gaussian doping profile and a peak of the phosphorus concentration close to the surface of the as-doped samples while the piled-up phosphorus almost disappeared with the oxide removal in an HF-dip. The trapped phosphorus appeared to be inactive as inferred from comparison of the sheet resistance measurements and calculations of the sheet resistance from the profiles. The phosphorus movement and activation are assumed to be due to detrapping-as it is also observed in the reverse dose loss effect of annealed implanted samples-and oxidation enhanced diffusion.
机译：通过使用无损两步掺杂工艺进行硅的浅磷掺杂。通过从气相中膦的自限解离吸附，磷沉积在硅表面上。磷的扩散和活化是通过在低压氧气气氛中接连进行常规的快速热灯退火来完成的。研究了不同的沉积和退火条件，以及氧化物覆盖率的影响。薄层电阻，氧化物厚度和磷浓度分别通过四点探针测量，椭偏和二次离子质谱（SIMS）进行分析。在850℃以上的不同温度下退火10秒钟，结深度为55 nm至126 nm，薄层电阻分别为1150至620Ω/ sq.。 SIMS测量显示高斯掺杂分布和靠近掺杂样品表面的磷浓度峰值，而堆积的磷在HF浸渍中随着氧化物的去除而几乎消失了。从薄层电阻测量值的比较和从轮廓计算得出的薄层电阻，可以推断出所捕获的磷是无活性的。磷的移动和活化被认为是由于去陷阱作用所致（正如在退火后的注入样品的反向剂量损失效应中也观察到的那样）以及氧化促进了扩散。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号