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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Influence of the spacer dielectric processes on PMOS junction properties
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Influence of the spacer dielectric processes on PMOS junction properties

机译：垫片介电工艺对PMOS结特性的影响

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摘要

In this paper, the interaction observed in PMOS transistor between the boron lightly doped drain (LDD) extensions and the spacer oxide and nitride dielectrics have been studied, with a simple experimental methodology. Low thermal budget oxide obtained by sub-atmospheric chemical vapor deposition (SACVD) and nitride deposited by plasma process have been evaluated as spacer layers. The influence of the oxide liner hydrogen content is shown to be critical for the p type shallow junction. Indeed, during the activation anneal, hydrogen content increases the boron out diffusion from the extension into the oxide liner and yield to a significant dose loss in this area. Nitride porosity has also been studied. A lower boron dose loss is observed with a porous layer because hydrogen can degas out significantly from the oxide, during anneal, through the porous nitride film. These results confirm the model of boron out diffusion based on oxide hydrogen content proposed by Kohli. Finally, a boron diffusion mechanism driven by chemistry and enhanced by hydrogen defects is proposed.
机译：本文采用一种简单的实验方法研究了在PMOS晶体管中观察到的硼轻掺杂漏极（LDD）延伸区与间隔层氧化物和氮化物电介质之间的相互作用。通过亚大气化学气相沉积（SACVD）获得的低热预算氧化物和通过等离子工艺沉积的氮化物已被评估为间隔层。氧化物衬里氢含量的影响对于p型浅结至关重要。实际上，在活化退火过程中，氢含量会增加硼从延伸区扩散到氧化物衬里的扩散，并在该区域产生明显的剂量损失。还研究了氮化物的孔隙率。在多孔层上观察到较低的硼剂量损失，因为在退火过程中，氢可通过多孔氮化物膜从氧化物中显着脱气。这些结果证实了由Kohli提出的基于氧化物氢含量的硼向外扩散模型。最后，提出了由化学驱动并由氢缺陷增强的硼扩散机理。

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