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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates
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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates

机译：硅衬底上离子束合成的金属介电纳米复合层的电子发射特性

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The search for cold electron field emission materials, with low threshold fields, compatible with existing integrated circuit fabrication has continued to attract a significant research interest over the past several years. This is primarily driven by their potential applications in vacuum microelectronic devices and flat panel displays. In this paper, the preparation of Ag-SiO_2 nanocomposite layers on Si substrates by Ag implantation into thermally oxidized SiO_2 layers is reported. The electron field emission (FE) properties of these nanocomposite layers were studied and correlated with results using other characterisation techniques, including atomic force microscopy, Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. The experimental results indicate that these nanocomposite layers have good FE properties with threshold fields as low as 13 V/μm. The FE mechanisms of these layers are discussed in term of an electrical inhomogeneity effect.
机译：在过去的几年中，一直在寻找具有低阈值场，与现有集成电路制造兼容的冷电子场致发射材料，这继续引起了重要的研究兴趣。这主要是由于它们在真空微电子设备和平板显示器中的潜在应用所驱动。本文报道了通过向热氧化的SiO_2层中注入Ag来在Si衬底上制备Ag-SiO_2纳米复合层的方法。使用其他表征技术，包括原子力显微镜，卢瑟福背散射光谱，X射线衍射和透射电子显微镜，研究了这些纳米复合层的电子场发射（FE）特性并将其与结果相关联。实验结果表明，这些纳米复合层具有良好的有限元性能，其阈值场低至13 V /μm。这些层的有限元机制是根据电非均匀性效应来讨论的。

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