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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Field effect on optical recombination in Si/SiGe quantum heterostructures having U, W and M type Ⅱ potential designs
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Field effect on optical recombination in Si/SiGe quantum heterostructures having U, W and M type Ⅱ potential designs

机译：具有U，W和M型Ⅱ型电势设计的Si / SiGe量子异质结构中的光重组的场效应

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摘要

We report on optoelectronic properties of devices based on Si/Si _(1-x)Ge_x systems. To limit the inherent problems of the type Ⅱ character and the indirect nature of the bandgap, we propose Si/Si_(1-x)Ge_(x) strained QW_s embedded in relaxed Si_(1-y)Ge_y barriers. The conduction and the valence band present a W-, Usami- or M-like potential profile with a quasi-type Ⅰ heterostructures. Based on Schroedinger equation, a theoretical analysis is made to calculate electric field dependent interband transitions in the three above-mentioned structures. The thickness and compositions (x > y) of these heterostructures are computed in order to get: (ⅰ) the optimum quantum confinement of electrons and heavy-holes levels; (ⅱ) the optimum out of plane oscillator strength and wave functions overlap; (ⅲ) to satisfy a fundamental emission at a key 1.55 μm wavelength below the absorption gap of the three designed structures. The effect of the applied electric field on quantum levels and oscillator strength is discussed.
机译：我们报告基于Si / Si _（1-x）Ge_x系统的器件的光电性能。为了限制Ⅱ型特征的固有问题和带隙的间接性质，我们提出了嵌入在松弛Si_（1-y）Ge_y势垒中的Si / Si_（1-x）Ge_（x）应变QW_s。导带和价带呈现出W型，Usami型或M型电位分布，具有准Ⅰ型异质结构。基于Schroedinger方程，进行了理论分析，以计算上述三个结构中与电场相关的带间跃迁。计算这些异质结构的厚度和组成（x> y），以获得：（ⅰ）电子和重空穴能级的最佳量子约束； （ⅱ）最佳平面外振荡器强度和波函数重叠； （ⅲ）满足在三个设计结构的吸收间隙以下的1.55μm关键波长处的基本发射。讨论了施加的电场对量子能级和振荡器强度的影响。

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