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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Control of band discontinuity at Ⅲ-Ⅴ semiconductor interface by Si intralayers
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Control of band discontinuity at Ⅲ-Ⅴ semiconductor interface by Si intralayers

机译：硅内层对Ⅲ-Ⅴ族半导体界面能带不连续性的控制

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摘要

Control of valence band discontinuity at AlAs/GaAs interface by Si intralayers is studied using reformulated tight binding method. The hybrid energies are calculated in the sp~3s~* configuration. The valence band offset at the interface without intralayer is 0.46 eV, in good agreement with experiments. The tuning of valence band offset using intralayers yields a maximum at 0.5 ML with a value of 1.01 eV, corresponding to induced potential of 0.55 eV. The induced potential increases, reaches maximum and decreases between 0 and 2 ML. The physical significance is charging and discharging of the microscopic capacitor, having a corresponding maximum induced potential at the saturation doping.
机译：研究了用Si内层控制AlAs / GaAs界面价带不连续性的方法。混合能量以sp〜3s〜*配置计算。没有内层的界面处的价带偏移为0.46 eV，与实验吻合良好。使用内层对价带偏移进行的调节在0.5 ML处产生最大值，值为1.01 eV，对应于0.55 eV的感应电势。感应电势增加，达到最大值并在0和2 ML之间减小。物理意义是对微型电容器的充电和放电，在饱和掺杂时具有相应的最大感应电势。

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