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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Si self-diffusivity using isotopically pure ~(30)Si epitaxial layers
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Si self-diffusivity using isotopically pure ~(30)Si epitaxial layers

机译：使用同位素纯〜（30）Si外延层的Si自扩散

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摘要

In order to understand the properties of point defects in Si, it is important to clarify temperature dependence of Si intrinsic self-diffusion coefficient over a wide temperature range. In this work, we used highly isotopically enriched ~(30)Si epi-layers as a diffusion source to bulk and epi-layers Si and evaluated self-diffusion ~(30)Si epi-layers were grown on each CZ-Si substrate and non-doped epi-layer grown on CZ-Si substrate using low pressure CVD with ~(30)SiH_4. Diffusion was performed in resistance furnaces under pure Ar (99.9%) atmosphere at temperature between 867 and 1300℃. After annealing, the concentrations of the respective Si isotopes were measured with SIMS. Diffusion coefficients of ~(30)Si (called Si self-diffusivity, D~(SD)) were determined using numerical fitting process with ~(30)Si SIMS profiles. We found no major differences in self-diffusivity between in bulk Si and epi-layers Si. It was shown that within 867-1300℃ range, D~(SD) can be described by an Arrhenius equation with one single activation enthalpy, D~(SD) = 14 exp (-4.37 eV/kT). The present result is in good agreement with that of Bracht et al.
机译：为了理解硅中点缺陷的特性，弄清硅在宽温度范围内的固有扩散系数的温度依赖性非常重要。在这项工作中，我们使用高度同位素富集的〜（30）Si外延层作为扩散源，以扩散和扩散Si，并评估了自扩散〜（30）Si外延层在每个CZ-Si衬底上生长，使用低压化学气相沉积（〜（30）SiH_4）在CZ-Si衬底上生长非掺杂外延层。扩散是在电阻炉中在纯Ar（99.9％）气氛下于867至1300℃之间进行的。退火后，用SIMS测量各个Si同位素的浓度。使用数值模拟（〜30）Si SIMS曲线确定〜（30）Si的扩散系数（称为Si自扩散系数，D〜（SD））。我们发现块状硅和外延层Si的自扩散性没有重大差异。结果表明，在867-1300℃范围内，D〜（SD）可以通过一个单一的激活焓D〜（SD）= 14 exp（-4.37 eV / kT）的Arrhenius方程来描述。目前的结果与Bracht等人的结果非常吻合。

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