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Behaviors of impurities in Cd_(0.85)Zn_(0.15)Te crystals grown by vertical Bridgman method

机译:垂直布里奇曼法生长Cd_(0.85)Zn_(0.15)Te晶体中杂质的行为

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摘要

The distribution of impurities Li, Na, Mg, Al, S, Cl, K, Cu, In, Ga and Ag in Cd_(0.85)Zn_(0.15)Te crystal ingots grown by vertical Bridgman method has been investigated using the inductively coupled plasma mass spectrometry (ICP/MS). It is found that the segregation coefficients of Al, S, In and Ga are larger than unit, which leads to their enrichment in the first-to-freeze portion of ingots, while the segregation coefficients of Li, Na, Mg, Cl, K, Cu and Ag are less than unit, which leads to their enrichment in the last-to-freeze portion of ingots. Resistivity measurements reveal that Mg, Al, S, Cl, In and Ga are positive to increase the resistivity of Cd_(0.85)Zn_(0.15)5Te, while Li, Na, K, Cu, and Ag are negative. Infrared (IR) transmission measurements and Hall measurements indicate that the free carrier absorption within the both impurity enriching portions decreases IR transmission and causes a decrease in IR transmission with the decrease of wavenumber. After an annealing processing, the concentration of all the impurities is highly reduced and the crystal properties are remarkably improved.
机译:利用感应耦合等离子体研究了垂直布里奇曼法生长的Cd_(0.85)Zn_(0.15)Te晶锭中Li,Na,Mg,Al,S,Cl,K,Cu,In,Ga和Ag中杂质Li,Na,Mg,Al的分布质谱(ICP / MS)。发现Al,S,In和Ga的偏析系数大于单位,这导致它们富集在铸锭的第一凝固部分,而Li,Na,Mg,Cl,K的偏析系数,Cu和Ag小于单位,这导致它们在晶锭的最后凝固部分富集。电阻率测量结果显示,Mg,Al,S,Cl,In和Ga为正值可增加Cd_(0.85)Zn_(0.15)5Te的电阻率,而Li,Na,K,Cu和Ag为负值。红外(IR)透射测量和霍尔测量表明,两个杂质富集部分内的自由载流子吸收会降低IR透射,并导致IR透射随波数的减少而降低。经过退火处理后,所有杂质的浓度都大大降低,晶体性能得到显着改善。

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