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The effect of step-wise surface nitrogen doping in MPECVD grown polycrystalline diamonds

机译：逐步表面氮掺杂在MPECVD生长多晶金刚石的影响

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摘要

Optical centres embedded via nitrogen doping in polycrystalline diamonds (PCDs) are becoming increasingly useful for several wide-area applications including magnetic field sensing. Therefore, investigating the effect of step-wise surface nitrogen doping in PCDs deposited at low pressure is essential. In this study, the influence of a step-wise surface nitrogen doping process on PCDs has been investigated to explain the dominance of neutral charged NV (NV~0) centres in PCDs deposited at low pressure in a chemical vapour deposition (CVD) chamber. The surface properties of the films were probed using Raman spectroscopy, Photoluminescence spectroscopy (PL), Scanning Electron Microscopy CSEM), Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and Grazing Incidence X-ray Diffractogram (GKRD). The results obtained from Raman analysis and corroborated by SEM micrographs show the formation of nanocrystalline diamonds (NCDs) with a large quantity of sp~2/a-C (amorphous carbon) phases at low nitrogen flow rates on the surface of the doped PCDs. Conversely, increasing nitrogen flow rate ([N/C] > 0.0025) reduced the formation of nano-grains resulting in a decrease in the sp~2 /a-C contents in the grains and grain boundaries. The increase in the [N/C] ratio and a decrease in the sp~2/a-C content at a high surface nitrogen flow rate (10 sccm) enhanced the formation of negatively charged nitrogen-vacancy (NV~-) centres. Furthermore, it was shown that the occurrence of stable NV~- centres in PCDs deposited at low pressure is also a function of the grain boundary line density: grain boundary line density increases at low surface nitrogen concentration thereby quenching the PL intensity of NV~- centres. Samples doped with high surface nitrogen have surface roughness of less than 10 nm. The low surface roughness of highly doped films will optimize the performance of magnetometers that uses these diamond films as NV detectors. Our results give a better understanding of the formation of negatively charged NV centres in PCDs deposited at low pressure.
机译：通过氮气掺杂在多晶钻石（PCD）中嵌入的光学中心对于包括磁场感测的几种广域应用越来越有用。因此，研究在低压下沉积的PCD中掺杂的逐步表面氮掺杂的效果至关重要。在该研究中，已经研究了逐步表面氮掺杂方法对PCD的影响，以解释在化学​​气相沉积（CVD）室的低压下沉积在低压下PCD中中性电荷的NV（NV〜0）中心的主导地位。使用拉曼光谱，光致发光光谱（PL），扫描电子显微镜CSEM，原子力显微镜（AFM），X射线光电子能谱（XPS）和放牧入射X射线衍射图（GKRD）探测膜的表面性质。由SEM显微照片从拉曼分析获得的结果显示，在掺杂PCD的表面上的低氮流速下，具有大量SP〜2 / A-C（无定形碳）相的纳米晶金刚石（NCD）的形成。相反，增加氮流速（[N / C]> 0.0025）降低了纳米颗粒的形成，导致晶粒和晶界中的SP〜2 / A-C含量下降。 [N / C]比率的增加和SP〜2 / A-C含量下的高表面氮流速（10SCCM）的降低增强了带负电荷的氮空位（NV〜 - ）中心的形成。此外，表明，在低压下沉积的PCD中稳定的NV〜中心的发生也是晶界线密度的函数：晶界线密度在低表面氮浓度下增加，从而淬火NV的PL强度〜 - 中心。掺杂有高表面氮的样品具有小于10nm的表面粗糙度。高掺杂薄膜的低表面粗糙度将优化使用这些金刚石薄膜作为NV探测器的磁力计的性能。我们的结果更好地了解在低压下沉积的PCD中形成带负电的NV中心。

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