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GaN in different dimensionalities: Properties, synthesis, and applications

机译：尺寸不同的GaN：性质，合成和应用

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摘要

Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low dimensional GaN provides structural and electronic changes, such as different geometrical configuration, surface trapped states and quantum confinement effect, which impose dramatic effects on the properties and even the ultimate applications. To construct desirable devices and expand the scope of applications for GaN, it necessitates an in-depth understanding of the dimensionality-dependent property. In this review, we firstly review the structure and properties of GaN in different dimensionalities. Successively, strategies for realizing the synthesis of GaN with various dimensionalities are generalized. Afterwards, we examine how their structure and properties are utilized in the significant applications involving microelectronic devices and energy conversion fields. Finally, we conclude by outlining a few research directions of GaN semiconductors that might be worthwhile for exploration in the future.
机译：由于特殊的四面体配位结构，纤锌矿GaN材料成为光电应用的许多方面的基础。与三维（3D）GaN相比，低维GaN提供了结构和电子方面的变化，例如不同的几何构型，表面陷阱态和量子限制效应，这对性能甚至最终应用都产生了巨大影响。为了构造所需的器件并扩大GaN的应用范围，必须深入了解尺寸相关的特性。在这篇综述中，我们首先回顾了不同尺寸的GaN的结构和性能。继而，概括了用于实现各种尺寸的GaN的合成的策略。之后，我们研究了它们的结构和性能如何在涉及微电子器件和能量转换领域的重要应用中得到利用。最后，我们通过概述GaN半导体的一些研究方向来总结，这些研究方向将来可能值得探索。

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