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Impurity engineering of Czochralski silicon

机译：直拉硅的杂质工程

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摘要

Microelectronic devices with high integration level and functional complexity are always requiring larger diameter and more perfect Czochralski (CZ) silicon wafers. Therefore, the defects, playing the key role in the quality control of silicon materials, have to be well controlled during crystal growth and device fabrication. Co-doping nitrogen (N), germanium (Ge) or carbon (C) into CZ silicon to control defect dynamics and to change defect evolution, so-called "impurity engineering", has been developed in recent years, and has been widely applied in the fabrication of higher quality CZ silicon used for microelectronics nowadays. This article is to present an overview of the current status of impurity engineering in CZ silicon, based on the co-doping technologies of N, Ge and C. The fundamental properties of these three co-dopants and their interaction with point defects in CZ silicon are firstly introduced. The bulk of the article is focused on the effects of co-dopants on the formation of oxygen precipitates related to internal gettering (IG) of devices for metal contaminants, and voids associated with the gate oxide integrity (GOI) of devices in CZ silicon. Finally, the improvement of CZ silicon mechanical strength by co-doping technology is described.
机译：具有高集成度和功能复杂性的微电子器件始终需要更大的直径和更完美的切克劳斯基（CZ）硅晶片。因此，在硅材料的质量控制中起关键作用的缺陷，必须在晶体生长和器件制造过程中得到很好的控制。近年来，已开发出将氮（N），锗（Ge）或碳（C）共掺杂到CZ硅中以控制缺陷动力学并改变缺陷演变的方法，即所谓的“杂质工程”，并已得到广泛应用。在当今用于微电子的高质量CZ硅的制造中。本文将基于N，Ge和C的共掺杂技术，概述CZ硅中杂质工程的现状。这三种共掺杂剂的基本性质及其与CZ硅中点缺陷的相互作用首先介绍。本文的大部分内容集中在共掺杂剂对氧沉淀物形成的影响上，该氧沉淀物与用于金属污染物的器件的内部吸杂（IG）和与CZ硅器件的栅极氧化完整性（GOI）相关的空隙有关。最后，介绍了通过共掺杂技术提高CZ硅机械强度的方法。

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  • 来源
    《Materials Science & Engineering》 |2013年第2期|1-33|共33页
  • 作者

    Xuegong Yu; Jiahe Chen; Xiangyang Ma; Deren Yang;

  • 作者单位

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    czochralski silicon; co-doping technology; impurity engineering; defects; oxygen precipitate; void;

    机译：czochralski硅;共掺杂技术;杂质工程;缺陷;氧沉淀;空隙;

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