Ni_2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Massimo Mazzillo; Antonella Sciuto; Fabrizio Roccaforte; Corrado Bongiorno; Roberto Modica; Salvatore Marchese; Paolo Badala; Denise Cali; Francesco Patane; Beatrice Carbone; Alfio Russo; Salvatore Coffa

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Ni_2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

机译：用于紫外光检测的Ni_2Si / 4H-SiC肖特基光电二极管

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Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni_2Si layer operating at 0V, properly designed for UV radiation monitoring.

机译：紫外线（UV）监控在医疗保健领域非常重要，可以防止过度的紫外线暴露风险。近年来，碳化硅（SiC）成为适合制造UV检测器的材料。在本文中，我们提出了一种4H-SiC肖特基光电二极管，该二极管具有连续的非常薄的Ni_2Si层，工作电压为0V，适合用于紫外线辐射监控。

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来源
《Materials science forum》 |2016年第2016期|1015-1018|共4页
作者
Massimo Mazzillo; Antonella Sciuto; Fabrizio Roccaforte; Corrado Bongiorno; Roberto Modica; Salvatore Marchese; Paolo Badala; Denise Cali; Francesco Patane; Beatrice Carbone; Alfio Russo; Salvatore Coffa;
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作者单位

STMicroelectronics, Catania 95121, Italy;

Institute for Microelectronics and Microsystems, National Research Council, Catania 95121, Italy;

Institute for Microelectronics and Microsystems, National Research Council, Catania 95121, Italy;

Institute for Microelectronics and Microsystems, National Research Council, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

STMicroelectronics, Catania 95121, Italy;

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正文语种 eng
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关键词
UV detectors; 4H-SiC; Schottky photodiodes; semi-transparent film; nickel silicide;

机译：紫外线检测器;4H-SiC;肖特基光电二极管;半透明膜硅化镍;

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专利

1. 4H-SiC Schottky photodiodes for ultraviolet flame detection [J] . M. Mazzillo, A. Sciuto Journal of instrumentation: an IOP and SISSA journal . 2015,第10期

机译：用于紫外线火焰检测的4H-SiC肖特基光电二极管
2. Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area [J] . Jun Hu, Xiaobin Xin, Jian H. Zhao, Optics Letters . 2006,第11期

机译：高灵敏度的可见盲极紫外Ni / 4H-SiC肖特基光电二极管
3. 4H-SiC Schottky diodes with Ni_2Si contacts for X-ray detection [J] . Lioliou G., Gemmell N. R., Mazzillo M., Nuclear instruments and methods in physics research . 2019,第OCTa1期

机译：具有Ni_2Si触点的4H-SiC肖特基二极管用于X射线检测
4. 4H-SiC Schottky photodiodes for ultraviolet light detection [C] . Mazzillo, Massimo, Sciuto, Antonella, Roccaforte, Fabrizio, Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE . 2011

机译：用于紫外线检测的4H-SiC肖特基光电二极管
5. Study of 4H-SiC and AlxGa1-xN Based Heterojunction Devices for Ultraviolet Detection Applications [D] . Chava, Venkata Surya Naga Raju. 2018

机译：基于4H-SiC和AlxGA1-XN的紫外检测应用的异质结装置研究
6. Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency [O] . Jianquan Kou, KangKai Tian, Chunshuang Chu, 2019

机译：高紫外线检测效率的4H-SiC分离吸收电荷和倍增雪崩光电二极管结构的优化策略
7. Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes [O] . Lioliou G, Mazzillo M C, Sciuto A, 2015

机译：4H-siC肖特基光电二极管的电学和紫外表征
8. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection [R] . Naval, V., Smith, C., Ryzhikov, V., 2010

机译：用于紫外线-a和紫外线-B检测的基于硒化锌的肖特基势垒探测器

Ni_2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

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