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首页> 外文期刊>Journal of Microelectromechanical Systems >A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process
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A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

机译：生产大面积沉积零应力LPCVD多晶硅膜的新技术：MultiPoly工艺

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摘要

Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit tensile or compressive residual stresses, depending on the deposition temperature. Polysilicon films composed of alternating tensile and compressive layers can display any overall stress value between those of the individual layers, including a state of zero overall residual stress, depending on the relative thickness of each layer. The residual stress gradient can be similarly controlled by the layer thicknesses and distribution. This has been demonstrated with a ten-layer near-zero stress (>10 MPa), near-zero stress gradient (/spl les/0.2 MPa//spl mu/m) polysilicon film, containing flat cantilever beams whose length-thickness ratios exceed 150. Using multilayer deposition to control the stresses and stress gradients of polysilicon films is termed the MultiPoly process.
机译：根据沉积温度，通过低压化学气相沉积（LPCVD）沉积的多晶硅膜表现出拉伸或压缩残余应力。由交替的拉伸和压缩层组成的多晶硅膜可以显示各个层之间的任何总应力值，包括总残余应力为零的状态，具体取决于每一层的相对厚度。残余应力梯度可以类似地通过层的厚度和分布来控制。十层接近零应力（> 10 MPa），接近零应力梯度（/ spl les / 0.2 MPa // spl mu / m）的多晶硅膜已证明了这一点，该薄膜包含长度和厚度比为平坦的悬臂梁超过150。使用多层沉积来控制多晶硅膜的应力和应力梯度被称为MultiPoly工艺。

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