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Thermal stress analysis for a CMOS-MEMS microphone with various metallization and materials

机译：具有各种金属化和材料的CMOS-MEMS麦克风的热应力分析

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Many micro-electromechanical systems (MEMS) microphone structures are developing along with the growing market of portable and smart devices. Therein, the impact of thermal loading is one of the inevitable concerns that need to be considered from the viewpoint of microphones reliability. This study focused on the thermal stress analysis for a complementary metal oxide semiconductor (CMOS)-MEMS microphone with various metallization and materials in diaphragm and back-plate under thermal loading; meanwhile, the weak points in the microphone structure under thermal loading were identified through simulation and experiment. In simulation, three-dimensional finite element (FE) models of the MEMS microphone with different metallization and materials in the diaphragm, including aluminum and copper, were built by commercial software ANSYS. The FE models were subjected to the thermal loading from -40 degrees C to 125 degrees C. In experiment, the failure mode of a CMOS-MEMS microphone chip by TSMC (Taiwan Semiconductor Manufacturing Company Limited) 0.18 mu m CMOS process after 500 cycles of thermal loading from -40 degrees C to 125 degrees C was analyzed using the images obtained from scanning electron microscope (SEM). The results from simulation are consistent with those from experiment. The stress at the interface of the metal located at the bottom of diaphragm is higher than that at its top according to FE analysis and the stress concentration was found at the interface between the diaphragm and Si substrate in the microphone. The SEM images showed the delamination and crack locations of the microphone after thermal cycling test agreed with those from FE analysis. Moreover, diverse metallization and materials were studied by FE analysis for structural enhancement of the microphone. The results indicated that adopting Cu layer instead of Al layer in the diaphragm could decrease the thermal stress around 33% when under thermal loading. The weak spots of the CMOS MEMS microphone chip were found in this study and an effective enhanced approach was proposed for this microphone structure with alternative metallization and material.
机译：许多微机电系统（MEMS）麦克风结构与不断增长的便携式和智能设备的市场一起发展。其中，从麦克风可靠性的观点来看，热负荷的影响是需要考虑的不可避免的问题之一。本研究专注于互补金属氧化物半导体（CMOS）-mems麦克风的热应力分析，在热负荷下具有各种金属化和背板中的各种金属化和材料;同时，通过仿真和实验鉴定了热负荷下麦克风结构中的弱点。在仿真中，MEMS麦克风的三维有限元（FE）模型具有不同金属化和膜片中的材料，包括铝和铜，包括商业软件Ansys。在实验中，将Fe模型从-40摄氏度达到125℃。在实验中，TSMC（台湾半导体制造有限公司）的CMOS-MEMS麦克风芯片的故障模式在500次循环后0.18 mu M CMOS工艺使用从扫描电子显微镜（SEM）获得的图像分析-40℃至125℃的热负荷。模拟结果与实验中的结果一致。位于隔膜底部的金属的界面处的应力高于Fe分析的顶部，并且在麦克风中的隔膜和Si衬底之间的界面处发现应力浓度。 SEM图像显示热循环试验与来自FE分析的循环测试后麦克风的分层和裂纹位置。此外，通过Fe分析研究了多样化的金属化和材料，用于麦克风的结构增强。结果表明，在热负荷下，在隔膜中采用Cu层代替Al层可能会降低约33％的热应力。在该研究中发现了CMOS MEMS麦克风芯片的弱斑点，提出了具有替代金属化和材料的麦克风结构的有效增强的方法。

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