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首页> 外文期刊>Microelectronic Engineering >Total reversibility of hysteresis in the transfer characteristics of organic thin-film transistor based on pentacene for nonvolatile memory applications
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Total reversibility of hysteresis in the transfer characteristics of organic thin-film transistor based on pentacene for nonvolatile memory applications

机译：基于并五苯的有机薄膜晶体管在非易失性存储应用中的传输特性中的磁滞完全可逆

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摘要

In this work, we have investigated the reversibility of hysteresis phenomena in the transfer characteristics of pentacene-based organic thin-film transistors. A clear hysteresis behavior in transfer characteristics is reported. A forward and backward scan of the gate voltage measurements reflected the appearance of hysteresis that arises due to humidity effect. Under vacuum, the hysteresis phenomenon is due to a purely electrical phenomenon based on the creation, trapping, and de-trapping of traps while under humidity the hysteresis is attributed to the diffusion of water molecules and/or oxygen into the organic active layer. The hysteresis width continuously increases with increasing the humidity in the linear and saturation regime. In contrast, the hysteresis significantly reduced under vacuum after pumping of 48 h. Consequently, the increase in hysteresis in the linear and saturation regimes arise due to humidity could be eliminated by a simple pumping under vacuum indicating the reversibility process. Based on these results, the investigated devices will be promising for some practical applications, such as nonvolatile memory device.
机译：在这项工作中，我们研究了并五苯类有机薄膜晶体管的传输特性中磁滞现象的可逆性。据报道在转移特性中明显的磁滞行为。栅极电压测量值的正向和反向扫描反映了由于湿度效应而引起的磁滞现象。在真空下，磁滞现象是由于纯电子现象引起的，该现象基于捕集阱的形成，捕获和去陷阱，而在湿度下，磁滞现象归因于水分子和/或氧气向有机活性层中的扩散。在线性和饱和状态下，磁滞宽度随着湿度的增加而连续增加。相反，泵送48小时后，在真空下，磁滞明显降低。因此，由于湿度引起的线性和饱和状态下的磁滞增加可以通过在真空下进行简单泵送来消除，该过程指示可逆过程。基于这些结果，所研究的器件将在某些实际应用中很有希望，例如非易失性存储器件。

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  • 来源
    《Microelectronic Engineering》 |2018年第7期|40-44|共5页
  • 作者

    Boukhili W.; Bourguiga R.;

  • 作者单位

    Univ Carthage, Lab Phys Mat Struct & Proprietes, Grp Phys Composants & Dispositifs Nanometr, Fac Sci Bizerte, Jarzouna 7021, Bizerte, Tunisia;

    Univ Carthage, Lab Phys Mat Struct & Proprietes, Grp Phys Composants & Dispositifs Nanometr, Fac Sci Bizerte, Jarzouna 7021, Bizerte, Tunisia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    OTFTs; Trapping/de-trapping charges; Humidity; Hysteresis phenomena; Reversibility;

    机译：OTFT;陷获/去陷电荷;湿度;迟滞现象;可逆性;

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