Effect of layout on electromigration characteristics in copper dual damascene interconnects

著录项

• 来源
  《Microelectronic Engineering》 |2014年第10期|19-23|共5页
• 作者

  Y.L. Cheng; Y.M. Chang; Jihperng Leu; T.C. Bo; Y.L. Wang;

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• 作者单位

  Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, ROC;

  Department of Material Science and Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan, ROC;

  Department of Material Science and Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan, ROC;

  Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, ROC;

  Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, ROC;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Electromigration; Interconnects; Copper; Layout;

  机译：电迁移;互连;铜;布局;