Effect of alternating Ar and SF_6/C_4F_8 gas flow in Si nano-structure plasma etching

著录项

• 来源
  《Microelectronic Engineering》 |2011年第8期|p.2470-2473|共4页
• 作者

  Lei Chen; Vincent Luciani; Houxun Miao;

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• 作者单位

  Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Caithersburg, MD 20899, USA;

  Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Caithersburg, MD 20899, USA;

  Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Caithersburg, MD 20899, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  plasma; etching; silicon;

  机译：等离子;蚀刻;硅;