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首页> 外文期刊>Microelectronics journal >A switched capacitor amplifier-based readout IC for diode-based infrared sensor
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A switched capacitor amplifier-based readout IC for diode-based infrared sensor

机译：基于开关电容放大器的基于二极管的红外传感器的读出IC

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摘要

In this paper a switched capacitor amplifier-based readout integrated circuit for diode-based infrared sensor is presented. Compared with the conventional integrator-based amplifier, the proposed switched capacitor amplifier achieves the PVT-insensitivity voltage gain. The noise performance is carefully analyzed and optimized, and the simulated total input equivalent noise reaches 8.15 mu V within 50 KHz bandwidth. To reduce the power consumption, the two level switch matrix and pulse powered column amplifier are proposed in the design. The methods of dummy metal line and current splitting DAC array are introduced to implement on-chip non-uniformity correction. The chip has been realized with a 0.35 pm 2-poly and 4-metal CMOS technology and occupies an area of 70 mm(2) consuming 185 mW from a 5 V power supply. The non-uniformity of output voltage is improved by 78.05% with the help of on-chip non-uniformity correction.
机译：本文提出了一种基于开关电容放大器的基于二极管的红外传感器读出集成电路。与传统的基于积分器的放大器相比，拟议的开关电容器放大器实现了PVT不敏感电压增益。仔细分析和优化了噪声性能，模拟的总输入等效噪声在50 KHz带宽内达到8.15μV。为了降低功耗，设计中提出了两级开关矩阵和脉冲供电的列放大器。介绍了虚拟金属线和电流分流DAC阵列的方法，以实现片内非均匀性校正。该芯片已采用0.35 pm的2-poly和4-metal CMOS技术实现，其面积为70 mm（2），使用5 V电源消耗185 mW。借助片上非均匀性校正，输出电压的非均匀性提高了78.05％。

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