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Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

机译：了解电流密度极高的GaN基LED的降解过程

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摘要

This work presents the first analysis of the degradation mechanisms induced by extremely high current densities on green InGaN-based LEDs. To this aim, bare-chip LEDs were submitted to current step-stress, until catastrophic failure. We identified a current density threshold, around 260 A/cm(2), beyond which the devices start degrading, showing an increase in leakage current both in reverse and forward bias regimes. Moreover, a current crowding effect was detected on the degraded samples by electroluminescence measurements. A lumped element model was developed to describe the effects of stress. Results suggest that localized power dissipation, due to high current density flow under the anode pad, induces the formation of shunt paths and, eventually, leads to the catastrophic failure of the LEDs. (C) 2017 Elsevier Ltd. All rights reserved.
机译：这项工作是对绿色InGaN基LED上极高电流密度引起的退化机理的首次分析。为此，裸芯片LED承受了当前的阶跃应力，直到发生灾难性故障。我们确定了大约260 A / cm（2）的电流密度阈值，超过该阈值，器件开始退化，这表明反向和正向偏置状态下的漏电流都增加了。此外，通过电致发光测量在降解的样品上检测到电流拥挤效应。开发了一个集总元素模型来描述应力的影响。结果表明，由于阳极垫下的高电流密度流动而导致的局部功耗会导致形成分流路径，并最终导致LED的灾难性故障。 （C）2017 Elsevier Ltd.保留所有权利。

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