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首页> 外文期刊>Microelectronics & Reliability >Interfacial evolution and bond reliability in thermosonic Pd coated Cu wire bonding on aluminum metallization: Effect of palladium distribution
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Interfacial evolution and bond reliability in thermosonic Pd coated Cu wire bonding on aluminum metallization: Effect of palladium distribution

机译：铝金属化热超声Pd包覆的Cu引线键合中的界面演变和键合可靠性：钯分布的影响

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In this paper, the growth kinetics of Cu-Al intermetallic compounds formed during isothermal annealing of Pd-Cu wire bonds with different palladium distribution at 175 degrees C are investigated by electron microscopy and compared to bare Cu wire bonds. Transmission electron microscopy (TEM) was used to provide high resolution imaging of the Cu-Al IMCs in the as-bonded state and TEM-EDX used to analyze the concentrations of Pd at the bond interface in the as-bonded state. Cu-Al IMCs were found to grow thicker with increasing annealing duration. The growth kinetics of the Cu-Al IMCs were correlated with the diffusion process during thermal annealing. The IMC thickness for Pd-Cu wire bonds with Pd at the bond interface was found to be thinner as compared to that for Pd-Cu wire bonds with no Pd at the bond interface. Thus, the presence of palladium at the bond interface has slowed down the IMC growth. Nano-voids were found in the Pd-Cu wire bonds with Pd at the bond interface, but not in the Pd-Cu wire bonds with no Pd at the bond interface. The IMC growth rate for the Pd-Cu bonds with no Pd was found to be close to that for bare Cu for the initial annealing durations. Corresponding bond pull testing showed that Pd-Cu wire bonds containing Pd have best preserved the bond strength after 168 h aging at 175 degrees C due to the beneficial presence of Pd. (C) 2016 Elsevier Ltd. All rights reserved.
机译：在本文中，通过电子显微镜研究了在175℃下具有不同钯分布的Pd-Cu焊线的等温退火过程中形成的Cu-Al金属间化合物的生长动力学，并将其与裸露的Cu焊线进行了比较。透射电子显微镜（TEM）用于提供处于键合状态的Cu-Al IMC的高分辨率成像，而TEM-EDX用于分析处于键合状态的键​​界面上的Pd浓度。发现Cu-Al IMC随着退火持续时间的增加而变厚。 Cu-Al IMC的生长动力学与热退火过程中的扩散过程相关。发现在键合界面处具有Pd的Pd-Cu线键合的IMC厚度比在键合界面处没有Pd的Pd-Cu线键合的IMC厚度更薄。因此，在键界面处钯的存在减慢了IMC的生长。在键合界面处有Pd的Pd-Cu线键合中发现了纳米孔，但在键合界面处没有Pd的Pd-Cu线键合中没有发现纳米孔。在初始退火期间，发现没有Pd的Pd-Cu键的IMC增长率接近于裸Cu的IMC增长率。相应的拉拔试验表明，由于Pd的存在，含有Pd的Pd-Cu线键合在175℃下老化168小时后，能够最好地保持键合强度。 （C）2016 Elsevier Ltd.保留所有权利。

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