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首页> 外文期刊>Microelectronics reliability >Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation
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Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation

机译：沟道氟注入增强SiN单轴应变n沟道金属氧化物半导体场效应晶体管的抗应力能力

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摘要

Channel fluorine implantation (CFI) has been successfully integrated with silicon nitride contact etch stop layer (SiN CESL) to investigate electrical characteristics and stress reliabilities of the n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with HfO_2/SiON gate dielectric. Although fluorine incorporation had been used widely to improve device characteristics, however, nearly identical trans-conductance, subthreshold swing and drain current of the SiN CESL strained nMOSFET combining the CFI process clearly indicates that stress-induced electron mobility enhancement does not affect by the fluorine incorporation. On the other hand, the SiN CESL strained nMOSFET with fluorine incorporation obviously exhibits superior stress reliabilities due to stronger Si-F/Hf-F bonds formation. The channel hot electron stress and constant voltage stress induced threshold voltage shift can be significantly suppressed larger than 26% and 15%, respectively. The results clearly demonstrate that combining the SiN CESL strained nMOSFET with fluorinated gate dielectric using CFI process becomes a suitable technology to further enhance stress immunity.
机译：沟道氟注入（CFI）已成功与氮化硅接触蚀刻停止层（SiN CESL）集成在一起，以研究具有HfO_2 / SiON的n沟道金属氧化物半导体场效应晶体管（nMOSFET）的电特性和应力可靠性栅极电介质。尽管掺入氟已被广泛用于改善器件特性，但是，结合了CFI工艺的SiN CESL应变nMOSFET的几乎相同的跨导，亚阈值摆幅和漏极电流清楚地表明，应力诱导的电子迁移率增强不受氟的影响成立。另一方面，掺入氟的SiN CESL应变nMOSFET由于具有更强的Si-F / Hf-F键形成，因此显然具有优越的应力可靠性。大于26％和15％时，沟道热电子应力和恒定电压应力引起的阈值电压偏移可以得到显着抑制。结果清楚地表明，使用CFI工艺将SiN CESL应变nMOSFET与氟化栅极电介质相结合成为进一步增强抗应力性的合适技术。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.995-998|共4页
  • 作者

    Yung-Yu Chen; Chin-Ren Hsieh; Fang-Yu Chiu;

  • 作者单位

    Department of Electronic Engineering, Lunghwa University of Science and Technology, Guishan, Taoyuan 333, Taiwan;

    Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;

    Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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