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W doping effect on the dielectric properties of amorphous Ga_2O_3 films grown on Si substrate for low-k applications

机译：W掺杂对低介电常数硅衬底上生长的非晶Ga_2O_3薄膜介电性能的影响

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Tungsten doped gallium oxide (Ga_2O_3:W) thin films were prepared by vacuum evaporation method on glass and silicon substrates. The W doping level was measured by the energy dispersive X-ray fluorescence (EDXRF) analysis. The molar ratio of W to Ga was 9.6%, 13.4%, 18.2%, 22.7%, and 30.4%. The crystalline state of the prepared oxide films was determined by the X-ray diffraction method. The oxide films deposited on silicon substrate have amorphous structure while those oxide films deposited on glass substrate show crystalline structure of p-Ga_2O_3, which confirms that the WO_3 oxide was totally doped in the lattice of Ga_2O_3 forming solid solution (SS). The electrical properties of the prepared amorphous W-doped films were studied for samples made in form of MOS: Au/Ga_2O_3:W/Si configuration. It was observed that W doping of certain level reduces the effective dielectric constant of Ga_2O_3:W film to less than that of SiO_2, i.e. the doping with WO_3 turns the high-k gallium oxide dielectric into low-k insulator. The dielectric relaxation of the doped films was studied through the complex dielectric modulus M*, from which the high-frequency dielectric constant εe_∞~' and the most probable relaxation time (t) as a function of W-dop-ing level was determined. The temperature dependent of the dc-current passes through Au/Ga_2O_3:W/Si arrangement predicts the red shift of the bandgap due to W doping.
机译：通过真空蒸发法在玻璃和硅衬底上制备了掺钨的氧化镓（Ga_2O_3：W）薄膜。通过能量色散X射线荧光（EDXRF）分析来测量W掺杂水平。 W与Ga的摩尔比为9.6％，13.4％，18.2％，22.7％和30.4％。通过X射线衍射法确定所制备的氧化膜的结晶状态。沉积在硅衬底上的氧化膜具有非晶结构，而沉积在玻璃衬底上的那些氧化膜显示出p-Ga_2O_3的晶体结构，这证明WO_3氧化物完全掺杂在形成固溶体（SS）的Ga_2O_3晶格中。对于以MOS：Au / Ga_2O_3：W / Si构造形式制成的样品，研究了制备的非晶W掺杂薄膜的电性能。观察到一定程度的W掺杂将Ga_2O_3：W膜的有效介电常数减小到小于SiO_2的有效介电常数，即，WO_3的掺杂使高k氧化镓电介质变成低k绝缘体。通过复介电模量M *研究了掺杂薄膜的介电弛豫，由此确定了高频介电常数εe_∞〜'和最可能的弛豫时间（t）作为W掺杂水平的函数。通过Au / Ga_2O_3：W / Si布置的与直流电流有关的温度可预测由于W掺杂导致的带隙的红移。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1050-1054|共5页
  • 作者

    A.A. Dakhel;

  • 作者单位

    Dept. of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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