• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Microelectronics reliability >Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET:Analog performance and linearity analysis
【24h】

Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET:Analog performance and linearity analysis

机译：局部电荷对纳米级圆柱形环绕栅MOSFET的影响：模拟性能和线性分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The paper presents a simulation study of Nanoscale Cylindrical Surrounding Gate (SRG) MOSFET with localised interface charges. The objective of the present work is to study the performance degradation due to hot carrier induced/radiation induced/stress induced damage in the form of localised/fixed charges at the semiconductor/oxide interface of the device. Impact of fixed charges has been studied on the characteristics such as drain current, transconductance and its higher order terms, device efficiency and linearity FOMs. Effect of nature and extension of interface fixed charges has been discussed in detail through extensive simulation. Circuit reliability issues of the device are discussed in terms of DC bias point degradation.
机译：本文介绍了具有局部接口电荷的纳米级圆柱形环绕栅（SRG）MOSFET的仿真研究。本工作的目的是研究由于热载流子引起的/辐射引起的/应力引起的损坏而导致的性能下降，这种损坏是以器件的半导体/氧化物界面处的局部/固定电荷的形式出现的。已经研究了固定电荷对漏极电流，跨导及其高阶项，器件效率和线性FOM等特性的影响。通过广泛的仿真详细讨论了接口固定电荷的性质和扩展的影响。根据直流偏置点的降级讨论了器件的电路可靠性问题。

著录项

  • 来源
    《Microelectronics reliability》 |2012年第6期|p.989-994|共6页
  • 作者

    Rajni Gautam; Manoj Saxena; R.S. Gupta; Mridula Gupta;

  • 作者单位

    Semiconductor Device Research Laboratory, Department of Electronic Science, University Of Delhi, South Campus, Benito Juarez Road, New Delhi 110 021, India;

    Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, Karampura, New Delhi 110 015, India;

    Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Sector 22, Rohini, New Delhi 110 086, India;

    Semiconductor Device Research Laboratory, Department of Electronic Science, University Of Delhi, South Campus, Benito Juarez Road, New Delhi 110 021, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号