• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Microelectronics reliability >A novel method to improve cell endurance window in source-side injection split gate flash memory
【24h】

A novel method to improve cell endurance window in source-side injection split gate flash memory

机译：一种改善源极侧注入分裂栅闪存中单元耐久度窗口的新方法

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

To enhance cell endurance window of a split gate flash memory, we used a ramp pulse with long rising time to replace the conventional square pulse for programming. The change is based on the study of the electric field at electron injection point (E_(G)) related to programming time. Statistic measurements on various samples including different technologies, cell locations (even or odd) and rise times were done. The results confirm that the read currents shift under erase state (ΔI_(rl)) could be improved significantly with an acceptable programming speed by the proposed method. For example, as increasing the rising time from 0.1 (μs to 20 μs for the conventional square pulse and the ramp pulse respectively, after 1 M cycling the AI_(r1) is reduced from 64.8% to 36.2% with an acceptable minimum programming time of 12.5 μs.
机译：为了增强分离栅闪存的单元耐久度窗口，我们使用了上升时间较长的斜坡脉冲来代替传统的方波进行编程。该变化基于对与编程时间相关的电子注入点（E_（G））处电场的研究。对包括不同技术，电池位置（偶数或奇数）和上升时间在内的各种样本进行了统计测量。结果证实，通过所提出的方法，在可接受的编程速度下，擦除状态（ΔI_（rl））下的读取电流移位可以得到显着改善。例如，随着上升时间从传统方波和斜坡脉冲的上升时间分别从0.1（微秒）增加到20微秒，在1 M循环后，AI_（r1）从64.8％降低到36.2％，可接受的最小编程时间为12.5微秒

著录项

  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1055-1059|共5页
  • 作者

    Yong-Shiuan Tsair; Yean-Kuen Fang; Feng-Renn Juang; Yu-Hsiung Wang; Wen-Ting Chu; Yung-Tao Lin; Luan Tran;

  • 作者单位

    VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;

    VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;

    VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;

    Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsin-Chu 300, Taiwan;

    Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsin-Chu 300, Taiwan;

    Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsin-Chu 300, Taiwan;

    Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsin-Chu 300, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号