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Challenges and developments of copper wire bonding technology

机译:铜线键合技术的挑战与发展

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摘要

Copper wire bonding has been studied for more than two decades. While copper wire bonding has many advantages over gold wire bonding, many challenges have to be solved to meet its application requirements. This paper presents the measures to overcome Cu oxidation, the optimization of bonding parameters and the improvement in capillary design. The reliability mechanism of copper wire bonding is described from the standpoints of IMC growth, pad Al squeeze and the ability of wire looping. The challenges of copper wire bonding on low-k wafers and some solutions are also briefly introduced.
机译:铜线键合已经研究了二十多年。尽管铜线键合比金线键合具有许多优势,但必须解决许多挑战才能满足其应用需求。本文提出了克服铜氧化的措施,优化了键合参数并改进了毛细管设计。从IMC的生长,焊盘Al的挤压和绕线能力的角度描述了铜线键合的可靠性机制。还简要介绍了在低k晶圆上进行铜线键合的挑战和一些解决方案。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1092-1098|共7页
  • 作者单位

    Jiangsu Key Laboratory of ASCI Design, Nantong University. Nantong 226019, PR China,Nantong Fujitsu Microelectronics Co., Ltd., Nantong 226006, PR China,Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China;

    Jiangsu Key Laboratory of ASCI Design, Nantong University. Nantong 226019, PR China,Nantong Fujitsu Microelectronics Co., Ltd., Nantong 226006, PR China;

    Jiangsu Key Laboratory of ASCI Design, Nantong University. Nantong 226019, PR China;

    Nantong Fujitsu Microelectronics Co., Ltd., Nantong 226006, PR China;

    Nantong Fujitsu Microelectronics Co., Ltd., Nantong 226006, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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