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首页> 外文期刊>Microelectronics & Reliability >K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability
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K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

机译:GaAs基板上的K带电容MEMS开关:设计,制造和可靠性

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摘要

Shunt capacitive RF MEMS switches were developed on GaAs substrate, using a Ⅲ-Ⅴ technology process that is fully compatible with standard MMIC fabrication. The switches show an insertion loss lower than 0.8 dB and isolation better than 30 dB with resonance frequencies in K-band, according to the switch geometric parameters. Reliability limits due to dielectric charging were overcome by applying suitable fast bipolar actuation waveforms, making the developed switches good candidates for both redundancy (always on/off) and cycled applications.
机译:分流电容式RF MEMS开关是在GaAs基板上开发的,采用了与标准MMIC制造完全兼容的Ⅲ-Ⅴ技术工艺。根据开关几何参数,在K波段的谐振频率下,这些开关的插入损耗低于0.8 dB,隔离度优于30 dB。通过施加合适的快速双极激励波形,克服了由于介电电荷引起的可靠性限制,这使得开发的开关成为冗余(始终开/关)和循环应用的良好候选者。

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  • 来源
    《Microelectronics & Reliability》 |2012年第10期|p.2245-2249|共5页
  • 作者单位

    Institute for Microelectronics and Microsystems (IMM-CNR), Unit ofLecce, Via Monteroni, 73100 Lecce, Italy;

    University of Padova, Department of Information Engineering. Via Gradenigo 6/B, 35131 Padova, Italy,Carnegie Mellon University, Department of Electrical and Computer Engineering. Pittsburgh, PA 15213, USA;

    University of Perugia, Department of Electronic and Information Engineering, 06125 Perugia, Italy;

    Institute for Microelectronics and Microsystems (IMM-CNR), Unit ofLecce, Via Monteroni, 73100 Lecce, Italy,University of Padova, Department of Information Engineering. Via Gradenigo 6/B, 35131 Padova, Italy;

    Institute for Microelectronics and Microsystems (IMM-CNR), Unit ofLecce, Via Monteroni, 73100 Lecce, Italy;

    Institute for Microelectronics and Microsystems (IMM-CNR), Unit ofLecce, Via Monteroni, 73100 Lecce, Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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