Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices

Poschgan Mario; Maynollo Josef; Inselsbacher Michael

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Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices

机译：功率半导体器件的倒置高频扫描声显微镜检查

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A high frequency Scanning Acoustic Microscopy (SAM) method with inverted inspection direction and its application to power semiconductor devices are described. The method comprises a preparation technique, which in turn allows the inversion of the inspection direction, which means inspection through the die backside and the use of high frequency SAM up to 230 MHz, for packaged power semiconductor devices. The improved resolution limit allows the detection of defects, such as metal degradation, bad wirebond adhesion and cracks. Case studies demonstrate the power of this method and advantages over other analysis methods.

机译：描述了具有倒置检查方向的高频扫描声显微镜（SAM）方法及其在功率半导体器件中的应用。该方法包括准备技术，该技术又允许反转检查方向，这意味着要通过裸片背面进行检查，并且要对封装的功率半导体器件使用高达230 MHz的高频SAM。改进的分辨率极限允许检测缺陷，例如金属降解，不良的引线键合粘附力和裂纹。案例研究证明了此方法的强大功能以及相对于其他分析方法的优势。

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来源
《Microelectronics & Reliability》 |2012年第10期|p.2115-2119|共5页
作者
Poschgan Mario; Maynollo Josef; Inselsbacher Michael;
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作者单位

Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria;

Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria;

Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices

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