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Engineering covalently bonded 2D layered materials by self-intercalation

机译：通过自插入工程通过自插入共价键合2D层材料

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摘要

Two-dimensional (2D) materials(1-5) offer a unique platform from which to explore the physics of topology and many-body phenomena. New properties can be generated by filling the van der Waals gap of 2D materials with intercalants(6,7); however, post-growth intercalation has usually been limited to alkali metals(8-10). Here we show that the self-intercalation of native atoms(11,12) into bilayer transition metal dichalcogenides during growth generates a class of ultrathin, covalently bonded materials, which we name ic-2D. The stoichiometry of these materials is defined by periodic occupancy patterns of the octahedral vacancy sites in the van der Waals gap, and their properties can be tuned by varying the coverage and the spatial arrangement of the filled sites(7,13). By performing growth under high metal chemical potential(14,15) we can access a range of tantalum-intercalated TaS(Se)(y), including 25% Ta-intercalated Ta9S16, 33.3% Ta-intercalated Ta7S12, 50% Ta-intercalated Ta10S16, 66.7% Ta-intercalated Ta8Se12 (which forms a Kagome lattice) and 100% Ta-intercalated Ta9Se12. Ferromagnetic order was detected in some of these intercalated phases. We also demonstrate that self-intercalated V11S16, In11Se16 and FexTey can be grown under metal-rich conditions. Our work establishes self-intercalation as an approach through which to grow a new class of 2D materials with stoichiometry- or composition-dependent properties.
机译：二维（2D）材料（1-5）提供独特的平台，从中探索拓扑和许多身体现象的物理学。可以通过使用插入式（6,7）填充2D材料的范德瓦尔差距来产生新的性质;然而，后生长后嵌入通常仅限于碱金属（8-10）。在这里，我们表明，天然原子（11,12）进入双层过渡金属二甲基甲基化物的生长产生的一类超薄，共价键合材料，我们为IC-2D命名。这些材料的化学计量由van der waals间隙中的八面体空位位点的周期性占用模式限定，并且可以通过改变覆盖率和填充部位的空间布置来调整它们的性质（7,13）。通过在高金属化学电位（14,15）下进行增长，我们可以进入一系列钽层间TA（SE）（y），包括25％TA9S16，33.3％TA嵌入TA7S12，50％TA嵌入TA10S16,66.7％TA-嵌入TA8SE12（形成kagome晶格）和100％TA嵌入TA9SE12。在这些插入阶段中的一些中检测到铁磁性阶。我们还证明了自嵌入的V11S16，In11se16和2Sptey可以在富含金属的条件下生长。我们的工作建立了自我嵌入作为一种方法，通过其和化学计量或组成依赖性的性质来发展新的2D材料。

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  • 来源
    《Nature》 |2020年第7807期|171-177|共7页
  • 作者

    Zhao Xiaoxu; Song Peng; Wang Chengcai; Riis-Jensen Anders C.; Fu Wei; Deng Ya; Wan Dongyang; Kang Lixing; Ning Shoucong; Dan Jiadong; Venkatesan T.; Liu Zheng; Zhou Wu; Thygesen Kristian S.; Luo Xin; Pennycook Stephen J.; Loh Kian Ping;

  • 作者单位

    Natl Univ Singapore Dept Mat Sci & Engn Singapore Singapore|Natl Univ Singapore Dept Chem Singapore Singapore|Natl Univ Singapore Ctr Adv 2D Mat Singapore Singapore;

    Natl Univ Singapore Dept Chem Singapore Singapore|Natl Univ Singapore Ctr Adv 2D Mat Singapore Singapore;

    Southern Univ Sci & Technol Dept Elect & Elect Engn Shenzhen Peoples R China;

    Tech Univ Denmark CAMD Lyngby Denmark|Tech Univ Denmark Ctr Nanostruct Graphene CNG Dept Phys Lyngby Denmark;

    Natl Univ Singapore Dept Chem Singapore Singapore|Natl Univ Singapore Ctr Adv 2D Mat Singapore Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore Singapore;

    Natl Univ Singapore NUSNNI NanoCore Singapore Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore Singapore;

    Natl Univ Singapore Dept Mat Sci & Engn Singapore Singapore;

    Natl Univ Singapore Dept Mat Sci & Engn Singapore Singapore;

    Natl Univ Singapore Dept Mat Sci & Engn Singapore Singapore|Natl Univ Singapore NUSNNI NanoCore Singapore Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore Singapore;

    Univ Chinese Acad Sci Sch Phys Sci Beijing Peoples R China|Univ Chinese Acad Sci CAS Ctr Excellence Topol Quantum Computat Beijing Peoples R China;

    Tech Univ Denmark CAMD Lyngby Denmark|Tech Univ Denmark Ctr Nanostruct Graphene CNG Dept Phys Lyngby Denmark;

    Sun Yat Sen Univ Ctr Phys Mech & Biophys State Key Lab Optoelect Mat & Technol Guangzhou Peoples R China;

    Natl Univ Singapore Dept Mat Sci & Engn Singapore Singapore;

    Natl Univ Singapore Dept Chem Singapore Singapore|Natl Univ Singapore Ctr Adv 2D Mat Singapore Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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