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A Fast Monte Carlo Ion Implantation Simulation Based on Statistical Enhancement Technique and Parallel Computation

机译：基于统计增强技术和并行计算的快速蒙特卡洛离子注入仿真

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摘要

A new statistical enhancement technique is proposed for the efficient Monte Carlo ion implantation simulation. A trajectory multiplication technique was applied to each stochastic ion trajectory calculation process. The ion trajectory was split into some copies by reducing its weight during the calculation to improve the distribution statistics. The splitting point was determined based on the three-dimensional ion flight length distribution. This technique could improve equivalent dynamic range of the implanted ion distribution profile, and resulted in a significant computation time reduction. Moreover, on the parallel computer (Cenju-3), using the algorithm in which the ions are shared among each processor, more than ten times calculation efficiency could be achieved. Using the new statistical enhancement technique on the parallel computer, approximately 100 times faster calculation was achieved. This enhances the Monte Carlo simulation feasibility for the advanced process/device total simulation system.
机译：提出了一种新的统计增强技术，用于有效的蒙特卡洛离子注入仿真。轨迹乘法技术已应用于每个随机离子轨迹计算过程。通过在计算过程中减小其重量来将离子轨迹分成一些副本，以改善分布统计。基于三维离子飞行长度分布确定分裂点。该技术可以提高注入的离子分布曲线的等效动态范围，并显着减少计算时间。此外，在并行计算机（Cenju-3）上，使用每个处理器之间共享离子的算法，可以实现十倍以上的计算效率。在并行计算机上使用新的统计增强技术，计算速度提高了大约100倍。这增强了先进的过程/设备总仿真系统的蒙特卡洛仿真的可行性。

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