首页> 外文期刊>NEC Research & Development >Synchrotron Radiation X-Ray Lithography for ULSI Fabrication
【24h】

Synchrotron Radiation X-Ray Lithography for ULSI Fabrication

机译:用于ULSI制造的同步辐射X射线光刻

获取原文
获取原文并翻译 | 示例
           

摘要

To evaluate the applicability of Synchrotron Radiation X-Ray Lithography (SRXL) in ULSI manufacturing processes, we fabricated n-channel Metal-Oxide Semiconductor (MOS) transistors and 64 Mb DRAMs. Resist patterns with deep vertical side walls were replicated by SRXL. No radiation effect was observed in the initial device characteristics. Hot-electron-induced instability caused by x-ray irradiation in MOS transistors with thin gate oxides was annealed out by post-metallization annealing at 420℃. Improvement of overlay accuracy is the key issue for application of SRXL to future device fabrication.
机译:为了评估同步辐射X射线光刻(SRXL)在ULSI制造过程中的适用性,我们制造了n沟道金属氧化物半导体(MOS)晶体管和64 Mb DRAM。 SRXL复制了具有深垂直侧壁的抗蚀剂图案。在初始器件特性中未观察到辐射效应。通过420℃的后金属化退火退火了X射线辐照的MOS晶体管中的热电子诱导的不稳定性。覆盖精度的提高是将SRXL应用到未来设备制造中的关键问题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号