The gettering mechanism of copper was studied as an example of metallic impuri- ties of SIMOX wafers. The authors developed a dual ion beam SIMS (Secondary Ion Mass Spectrometry) for quantifying distribution of the buried oxide/silicon bound- Aries along the depth of SIOX wafers and the developed method successfully iden- tified gettering sites. Changes during the heat treatment process suggest that prior- Ity sites of gettering are stacking fault tetrahedra (SFT)and that excessive copper Segregates at the buried oxide/silicon substrate boundaries or around the SFTs.
展开▼
