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The thermal neutron response of miniature silicon carbide semiconductor detectors

机译:小型碳化硅半导体探测器的热中子响应

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摘要

Neutron response calibrations have been performed for miniature SiC semiconductor detectors based on a Schottky diode design in neutron fields maintained at the National Institute of Standards and Technology (NIST). The SiC diodes detect neutrons via neutron-induced charged particles (tritons) produced by the Li-6(n,alpha)H-3 reaction. The neutron response was calibrated at fluence rates from 1.76 x 10(4) to 3.59 x 10(10) cm(-2) s(-1) in NIST neutron fields. The maximum deviation from linearity of the fit of the neutron response of the SiC detectors to the NIST-measured fluence rates is much less than 5%, which is the estimated uncertainty in the measured fluence rates. A direct comparison of the SiC count rates to count rates obtained with a NIST double fission chamber over limited ranges where the detector positions and configurations remain unchanged shows a relative precision of +/-0.6%. In a separate set of calibrations, a SiC neutron detector that had been previously irradiated with a fast (E > 1 MeV) neutron fluence of 1.3 x 10(16) cm(-2) was found to have an absolute neutron fluence rate response that was indistinguishable from that of a previously unirradiated detector. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 12]
机译:基于美国国家标准技术研究院(NIST)维护的中子场中的肖特基二极管设计,已经对微型SiC半导体探测器进行了中子响应校准。 SiC二极管通过Li-6(n,α)H-3反应产生的中子感应带电粒子((子)来检测中子。在NIST中子场中,以1.76 x 10(4)到3.59 x 10(10)cm(-2)s(-1)的注量速率校准中子响应。 SiC检测器的中子响应对NIST测量的注量率的拟合线性度的最大偏差远小于5%,这是估计的注量率的不确定性。在检测器位置和配置保持不变的有限范围内,将SiC计数速率与NIST双裂变室获得的计数速率进行直接比较显示出+/- 0.6%的相对精度。在另一套校准中,发现先前用1.3 x 10(16)cm(-2)的快速中子注量(E> 1 MeV)照射的SiC中子探测器具有绝对中子注量率响应,与以前未辐照过的探测器无法区分。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:12]

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