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首页> 外文期刊>Transactions of the American nuclear society >The High-Energy Neutron Response of Silicon Carbide Semiconductor Neutron Detectors
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The High-Energy Neutron Response of Silicon Carbide Semiconductor Neutron Detectors

机译：碳化硅半导体中子探测器的高能中子响应

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摘要

Silicon Carbide (SiC) radiation detectors are being developed for neutron detection and energy spectrometry. Silicon carbide detectors operate at elevated temperatures up to more than 300 ℃ and are more resistant to the effects of radiation than conventional semiconductor detectors. Thermal, epithermal and fast neutron-response measurements have been reported previously. The fast neutron response is a result of ionization produced primarily by energetic ions from (n,n'), (n,α) and (n,p) reactions with the silicon and carbon atoms in the SiC detector. The ionization produced in the active region of the SiC diode detectors is collected under the influence of a reverse bias voltage, and pulse height analysis electronics are used to perform spectrometry on the detector output pulses. The pulse height spectrum contains information which may be used to derive information on the energy spectrum of neutrons incident on the detector. Efforts to develop methods to unfold the incident neutron energy spectrum from the pulse height spectrum are described in a companion paper.
机译：碳化硅（SiC）辐射探测器正在开发用于中子探测和能量光谱分析。碳化硅探测器在高达300℃以上的高温下工作，比传统的半导体探测器更能抵抗辐射。先前已经报道了热，超热和快速中子响应测量。快速中子响应是电离的结果，该电离主要是由（n，n'），（n，α）和（n，p）与SiC检测器中的硅和碳原子反应产生的高能离子产生的。在反向偏置电压的影响下，收集在SiC二极管检测器的有源区域中产生的电离，并使用脉冲高度分析电子设备对检测器的输出脉冲进行光谱分析。脉冲高度谱包含可用于导出入射到探测器上的中子能谱信息的信息。在随附的论文中描述了开发方法以从脉冲高度谱展开入射中子能谱的努力。

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