• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical and quantum electronics >Optical characterization of a-IGZO thin film for simulation of a-IGZO(n)/μ-Si(p) heterojunction solar cell
【24h】

Optical characterization of a-IGZO thin film for simulation of a-IGZO(n)/μ-Si(p) heterojunction solar cell

机译：用于模拟a-IGZO（n）/μ-Si（p）异质结太阳能电池的a-IGZO薄膜的光学表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Amorphous In-Ga-Zn-O (a-IGZO) thin films with (1:1:2) molar fraction were grown using spin coating deposition at room temperature on glass substrates. The effect of three rotation speeds (3000, 4000, 5000 rpm) of the spin coating machine on the films structure and transparency is studied by X-ray diffraction and UV-visible transmission. It was found that the film obtained at 3000 rpm has the best transmission which is over 80 % in the visible wavelength range. The absorbance at ultra violet wavelengths is used to calculate the band gap of the 3000 rpm sample and the obtained value is about 3.6 eV. The reflectance at visible and infrared wavelengths is used to calculate the refractive index. An average value of 2.45 was found. The calculated optical parameters were used as optical input parameters for modeling an a-IGZO(n)/μ-Si(p) heterojunction solar cell using a commercial software. The cell exposed to AM 1.5 spectrum presents promising optimal outputs parameters: a short-circuit current density J_(sc) of 32.41 mA cm~(-2), an open-circuit voltage V_(oc) of 0.47 V, a fill factor FF of 38 % and a conversion efficiency η of 5.79 %.
机译：使用旋涂法在室温下在玻璃基板上生长摩尔分数为（1：1：2）的非晶In-Ga-Zn-O（a-IGZO）薄膜。通过X射线衍射和紫外可见光透射光谱研究了旋涂机的三种转速（3000、4000、5000 rpm）对薄膜结构和透明度的影响。发现以3000rpm获得的膜具有最佳透射率，其在可见波长范围内超过80％。紫外波长的吸光度用于计算3000 rpm样品的带隙，所得值为约3.6 eV。可见光和红外波长的反射率用于计算折射率。发现平均值为2.45。所计算的光学参数被用作光学输入参数，以使用商业软件对a-IGZO（n）/μ-Si（p）异质结太阳能电池进行建模。暴露于AM 1.5光谱的电池呈现出有希望的最佳输出参数：短路电流密度J_（sc）为32.41 mA cm〜（-2），开路电压V_（oc）为0.47 V，填充系数FF 38％的转化率和5.79％的转化效率η。

著录项

  • 来源
    《Optical and quantum electronics》 |2016年第8期|391.1-391.16|共16页
  • 作者

    F. Azri; M. Labed; A. F. Meftah; N. Sengouga; A. M. Meftah;

  • 作者单位

    Laboratory of Metallic and Semiconducting Material (LMSM), University of Biskra, 07000 Biskra, Algeria;

    Laboratory of Metallic and Semiconducting Material (LMSM), University of Biskra, 07000 Biskra, Algeria;

    Laboratory of Metallic and Semiconducting Material (LMSM), University of Biskra, 07000 Biskra, Algeria;

    Laboratory of Metallic and Semiconducting Material (LMSM), University of Biskra, 07000 Biskra, Algeria;

    Laboratory of Metallic and Semiconducting Material (LMSM), University of Biskra, 07000 Biskra, Algeria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    a-IGZO; Spin coating; μ-Si; Solar cell; Numerical simulation;

    机译：IGZO;旋涂;硅太阳能电池;数值模拟;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号