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Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

机译：GaAs（001）衬底上的InAs分子束外延生长和表征

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摘要

High-quality InAs epilayers were grown onto GaAs (001) substrate by molecular beam epitaxy. The optimal growth conditions were examined over a wide range of substrate temperature, substrate offcut orientation, and As_4/In flux ratio. The surface morphology, electrical and structural properties were investigated by Nomarski optical microscopy, Hall effect measurement, and X-ray diffraction, respectively. It is worth noting that InAs layers grown on GaAs (001) substrate with 2° offcut towards (110) have better crystalline quality and electrical properties than that grown on GaAs substrate without offcut. The results indicated that the layers grown at 400 ℃, with a group Ⅴ/Ⅲ flux ratio of 8.5, yielded to the highest electrical quality, with a Hall mobility of 22,420 cm~2/Vs at 80 K and 12,970 cm~2/Vs at room temperature. It is found that the top part of 5 μm-thick InAs layer exhibits a high Hall mobility of 77,380 and 25,275 cm~2/Vs, at 80 and 300 K, respectively.
机译：通过分子束外延将高质量的InAs外延层生长在GaAs（001）衬底上。在较宽的衬底温度，衬底切缝取向和As_4 / In通量比的范围内检查了最佳生长条件。通过Nomarski光学显微镜，霍尔效应测量和X射线衍射分别研究了表面形态，电学和结构性能。值得注意的是，在GaAs（001）衬底上向（110）方向有2°斜角生长的InAs层比在没有Offcut的GaAs衬底上生长的InAs层具有更好的晶体质量和电性能。结果表明，在400℃下生长的层，Ⅴ/Ⅲ族通量比为8.5，在80 K和12,970 cm〜2 / Vs下具有最高的电质量，霍尔迁移率为22,420 cm〜2 / Vs。在室温下。已发现，厚度为5μm的InAs层的顶部在80 K和300 K时分别具有77,380和25,275 cm〜2 / Vs的高霍尔迁移率。

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  • 来源
    《Optical and quantum electronics》 |2016年第9期|428.1-428.7|共7页
  • 作者

    D. Benyahia; L. Kubiszyn; K. Michalczewski; A. Keblowski; P. Martyniuk; J. Piotrowski; A. Rogalski;

  • 作者单位

    Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MBE; InAs; GaAs; Hall effect; X-ray diffraction;

    机译：MBE;InAs;砷化镓;霍尔效应X射线衍射;

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