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首页> 外文期刊>Optical and quantum electronics >Influence of the surface treatment with low-energy Ar~+ plasma on graphene and defected graphene layers
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Influence of the surface treatment with low-energy Ar~+ plasma on graphene and defected graphene layers

机译：低能Ar〜+等离子体表面处理对石墨烯和缺陷石墨烯层的影响

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摘要

Here we present results on the influence of low-energy Ar~+ plasma of different duration (from 8 to 60 s) on graphene-containing layers deposited on different surfaces (diamond-like carbon and SiO_2) and their subsequent annealing. We used Ar~+ plasma with a dose of 10~(15) Ar~+/cm~(-2) intended to impact the upper 1 nm thick layer of the treated film. The influence was evaluated by Raman and X-ray photoelectron spectroscopy. It was found that the low-energy Ar~+ plasma treatment significantly worsened the quality of graphene and defected graphene even though this was expected. However, a significant self-healing of the modified samples was observed after rapid radiation annealing by 1 kW halogene lamp in vacuum: the FWHM of the 2D band recovers about 90 % of its initial value of 45 cm~(-1), the intensity ratios I_(2D)/I_G and I_G/I_(D′) reach 1.6 and 2.5, respectively. In addition, the final 2D band can be deconvoluted into 6 peaks with FWHM of about 24 cm~(-1) pointing to formation of three-layered graphene.
机译：在这里，我们介绍了不同持续时间（8至60 s）的低能Ar〜+等离子体对沉积在不同表面（类金刚石碳和SiO_2）上的含石墨烯的层及其后续退火的影响。我们使用的Ar〜+等离子体的剂量为10〜（15）Ar〜+ / cm〜（-2），旨在撞击处理过的薄膜的上部1 nm厚的层。通过拉曼和X射线光电子能谱评估了影响。发现低能量的Ar〜+等离子体处理显着恶化了石墨烯和缺陷石墨烯的质量，尽管这是可以预期的。然而，在真空中用1 kW卤素灯在真空中进行快速辐射退火后，观察到改性样品具有明显的自修复：2D波段的FWHM恢复到其初始值45 cm〜（-1）的90％。 I_（2D）/ I_G和I_G / I_（D'）之比分别达到1.6和2.5。此外，最终的2D带可以解卷积为6个峰，FWHM约为24 cm〜（-1），表明形成了三层石墨烯。

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