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首页> 外文期刊>Optical and quantum electronics >Broadband and polarization insensitive design of terahertz absorber with high-index contrast grating on SOI chip
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Broadband and polarization insensitive design of terahertz absorber with high-index contrast grating on SOI chip

机译：SOI芯片上具有高折射率对比光栅的太赫兹吸收器的宽带和偏振不敏感设计

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摘要

Simple design of a broadband terahertz absorber consisting of a high-index contrast grating (HCG) on a silicon-on-insulator chip is proposed. Large absorption (98.4 %) over a wavelength range of 66-84 μm is obtained for normal incidence with large fabrication tolerance (14 μm grating period tolerance for grating height of 2.6 μm). The absorption remains high (～98 %) for wide range of angle of incidence from 0° (normal incidence) to 60°. The bandwidth of high absorption (～98%) is also large i.e. 40 μm over a wide range of angle of incidence from 0° to 60°. The proposed broadband terahertz absorber also exhibits the design flexibility for the realization of polarization insensitivity with respect to the incident light of arbitrary polarizations. The proposed structure is easy-to-fabricate with a large fabrication tolerance which may provide a desirable broadband absorption for practical applications in terahertz devices. The proposed absorber is designed using rigorous coupled wave analysis and the results are in good agreement (with a maximum difference of 0.6 % in absorption) with those obtained with finite difference time domain method. The proposed characteristics of the device arise from the wavelength scalability and broadband nature of the HCG.
机译：提出了在绝缘体上硅芯片上由高折射率对比光栅（HCG）组成的宽带太赫兹吸收器的简单设计。对于法向入射，在66-84μm的波长范围内可获得大吸收（98.4％），具有大的制造公差（对于2.6μm的光栅高度，其光栅周期公差为14μm）。在从0°（垂直入射）到60°的宽入射角范围内，吸收率仍然很高（〜98％）。高吸收带宽（〜98％）也很大，即在0°至60°的宽入射角范围内为40μm。所提出的宽带太赫兹吸收器还表现出针对任意偏振的入射光实现偏振不敏感的设计灵活性。所提出的结构易于制造且具有大的制造公差，这可以为太赫兹器件的实际应用提供理想的宽带吸收。提出的吸收器采用严格的耦合波分析设计，结果与时域有限差分法获得的结果吻合良好（最大吸收差异为0.6％）。该设备的建议特性来自HCG的波长可扩展性和宽带特性。

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