Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes

著录项

• 来源
  《Optical and quantum electronics》 |2015年第7期|1671-1677|共7页
• 作者

  Q. Y. Zeng; W. J. Wang; J. Wen; P. X. Xu; W. D. Hu; Q. Li; N. Li; W. Lu;

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• 作者单位

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,University of Chinese Academy of Sciences, Beijing 100000, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, Anhui, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,University of Chinese Academy of Sciences, Beijing 100000, China;

  University of Chinese Academy of Sciences, Beijing 100000, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,University of Chinese Academy of Sciences, Beijing 100000, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  InGaAs/InP avalanche photodiodes; Dark current; Carriers lifetime;

  机译：InGaAs / InP雪崩光电二极管;暗电流载具寿命;