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Enhanced light-extraction efficiency of GaN-based light-emitting diodes with hybrid Photonic Crystals

机译:混合光子晶体的GaN基发光二极管的光提取效率提高

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The light-extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs) is strictly limited by total internal reflection (TIR) and Fresnel reflection. In this paper, we sought to utilize hybrid Photonic Crystals (PhCs) with different etched depth to increase the LEE of GaN-based LEDs. The results showed that the structure proposed here could decrease not only the TIR but also the Fresnel reflection. Three-dimensional rigorous coupled waves approach was employed to calculate the total transmission efficiency at different incident angles, and numerical simulations based on finite-difference time-domain method were carried out to explore mechanisms by which hybrid PhCs can effectively improve the LEE. This improvement is related to the grade-refractive-index effect and diffraction properties of the hybrid PhCs. And the structure proposed here provides a train of thought for the design of high efficiency LEDs.
机译:GaN基发光二极管(LED)的光提取效率(LEE)受到全内反射(TIR)和菲涅耳反射的严格限制。在本文中,我们试图利用具有不同蚀刻深度的混合光子晶体(PhC)来增加GaN基LED的LEEE。结果表明,本文提出的结构不仅可以减小TIR,而且可以减小菲涅耳反射。采用三维严格耦合波方法计算了不同入射角下的总传输效率,并基于时域有限差分法进行了数值模拟,探索了混合PhC可以有效改善LEE的机理。这种改进与混合PhC的梯度折射率效应和衍射特性有关。此处提出的结构为高效LED的设计提供了思路。

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