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Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

机译：（113）B InAs / InP量子点激光器中的载流子动力学和饱和效应

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摘要

Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 mu m InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 mu m associated to a threshold current density as low as 820 A/cm(2) for a six InAs QD stacked layers. Finally, a rate equation model based on the reservoir theory is used to model both time-resolved photoluminescence (TRPL) and electroluminescence results. It is shown that carrier dynamic calculations are in a good agreement with measurements since the saturation effect occurring at high injected power is clearly predicted.
机译：量子点（QD）激光器具有许多有趣且有用的特性，例如低阈值电流，温度不敏感或无chi行为。为了达到长距离光传输的标准，已经开发了在InP衬底上的1.55μmInAs QD激光器。基于时间分辨光致发光（PL）测量，首先研究载流子动力学行为。然后显示了在室温下的电致发光（EL）结果，显示出以1.61μm为中心的激光发射，与六个InAs QD堆叠层的阈值电流密度低至820 A / cm（2）相关。最后，使用基于储层理论的速率方程模型对时间分辨光致发光（TRPL）和电致发光结果进行建模。结果表明，载流子动态计算与测量结果非常吻合，因为可以清楚地预测在高注入功率下发生的饱和效应。

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