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Characterization of CuO-Si pn junction synthesized by successive ionic layer adsorption and reaction method

机译：连续离子层吸附反应法合成CuO / n-Si pn结的表征

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摘要

Transparent conducting Copper oxide CuO thin films were successfully synthesized on glass and n-type Silicon substrates by successive ionic layer adsorption and reaction method. The crystal structure, surface texture, optical and electrical properties were studied. The results revealed that the deposited CuO thin films at different cycles number (5, 10, 15), have polycrystalline structure nature with monoclinic phase, and the crystallite size increases with the increase of cycles number. The average roughness and the root mean square values increase with increasing cycles number. The optical energy band gap and Urbach energy was decrement from 2.33eV and 1.2eV for 5 cycles to 2.1eV and 0.82eV for 15 cycles. The electrical properties of Ni/CuO-Si pn junction were studied using current-voltage (I-V) measurements. The barrier heights (phi(B)) of Ni/CuO-Si thin films were calculated and its values are (0.716, 0.736, 0.723) eV, for 5, 10 and 15 cycles respectively with an applied bias voltage of 3V.
机译：通过连续的离子层吸附和反应方法，在玻璃和n型硅衬底上成功合成了透明导电氧化铜CuO薄膜。研究了晶体结构，表面织构，光学和电学性质。结果表明，不同周期数（5、10、15）下沉积的CuO薄膜具有多晶结构性质，具有单斜晶相，微晶尺寸随周期数的增加而增大。平均粗糙度和均方根值随循环次数的增加而增加。光能带隙和Urbach能量从5个周期的2.33eV和1.2eV减小到15个周期的2.1eV和0.82eV。使用电流-电压（I-V）测量研究了Ni / CuO / n-Si pn结的电性能。计算了Ni / CuO / n-Si薄膜的势垒高度（phi（B）），在施加3V偏置电压的情况下，对于5、10和15个循环，其势垒值分别为（0.716、0.736、0.723）eV。

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