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首页> 外文期刊>Optical and quantum electronics >Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP
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Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP

机译：Al掺杂浓度对NSP制备的SnS薄膜光电颤动的影响

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Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B-1g, B-2g, and B-3g vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695x10(-1) cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.
机译：在本文中，我们重点介绍了通过不同铝掺杂浓度的喷雾热解工艺制备的SnS薄膜的关键特征。通过各种技术表征涂覆有不同Al浓度（0、2、4、6 wt％）的SnS薄膜。通过XRD数据研究表明，所制备的所有薄膜均为正交晶系晶体结构，其中（111）为优先取向。拉曼光谱表明，在相应的波数处存在Ag，B-1g，B-2g和B-3g振动模式。 AFM图像显示了Al：SnS薄膜的浓度依赖性颗粒变化。通过EDAX照片确认没有任何其他杂质的Sn，S和Al元素的存在。 UV研究表明，随着Al掺杂浓度从0％增至4 wt％，带隙从1.97eV缩小到1.72eV。室温PL显示出很高的强烈红移，因为在722nm处观察到4％的Al掺杂SnS薄膜的发射。霍尔测量显示出未掺杂和Al掺杂的SnS膜的p型导电性质。薄膜在重量百分比为Al的掺杂浓度下显示4的最低电阻率为2.695x10（-1）cm。对于由4重量％的Al掺杂的SnS薄膜制造的太阳能电池装置，获得0.093％的效率。

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