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首页> 外文期刊>Optical and quantum electronics >Investigation of the thermal annealing effect on the optical, thermal and electrical properties of Sn_2Sb_2S_5 evaporated thin films
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Investigation of the thermal annealing effect on the optical, thermal and electrical properties of Sn_2Sb_2S_5 evaporated thin films

机译：热退火对Sn_2Sb_2S_5蒸发薄膜的光学，热和电性能的影响

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摘要

Sn_2Sb_2S_5 materials were synthesized by thermal evaporation using earth-abundant tin, antimony and sulfur elements. The effect of annealing temperature on structural, morphological, optical, thermal and electrical characterization was obtained using many techniques. The deposited films were annealed in air for 1 h at 100 ℃ and 300 ℃. X-ray diffraction analysis reveals that while as-deposited films are amorphous, a crystallized phase, with an orthorhombic crystalline structure, appears after annealing. Via the photothermal deflection spectroscopy, the sub-bandgap energy decreased from 1.98 to 1.75 eV with rising the annealing temperature. Besides, static and dynamic thermal properties of as deposited and annealed Sn_2Sb_2S_5 thin films were measured using electropyroelectric method. It was observed that an increase (40.5-46.5 W m~(-1) K~(-1)) was found for the thermal conductivity values by increasing annealing temperature, while thermal diffusivity decreases from 12.1×10~(-6) to 9.31×10~(-6) m~2 s~(-1). Moreover, Nyquist spectra performance in the temperature range 300-540 K revealed the presence of a relaxation phenomenon in the microstructure of the studied sample. In addition, the level of the peaks is crashed with temperature, showing that the charge carriers are thermally activated. Finally, Sn_2Sb_2S_5 thin film annealed at 300 ℃ was found the best sample for use in optoelectronic and solar cell devices. This work suggests a low cost promising compound for scalable synthesis of Sn_2Sb_2S_5 thin films for solar cell and photovoltaic applications.
机译：利用富含稀土元素的锡，锑和硫元素通过热蒸发法合成了Sn_2Sb_2S_5材料。使用多种技术可以获得退火温度对结构，形态，光学，热和电特性的影响。将沉积的薄膜在100℃和300℃的空气中退火1小时。 X射线衍射分析表明，尽管沉积的薄膜是非晶态的，但退火后会出现具有正交晶体结构的结晶相。通过光热偏转光谱，随着退火温度的升高，亚带隙能量从1.98降至1.75 eV。此外，使用电热电法测量了沉积和退火后的Sn_2Sb_2S_5薄膜的静态和动态热性能。观察到，随着退火温度的升高，导热系数增加（40.5-46.5 W m〜（-1）K〜（-1）），而热扩散系数从12.1×10〜（-6）降低至9.31×10〜（-6）m〜2秒〜（-1）。此外，在300-540 K的温度范围内的奈奎斯特光谱性能表明，所研究样品的微观结构中存在松弛现象。另外，峰值的水平随温度崩溃，表明电荷载流子被热激活。最后，发现在300℃退火的Sn_2Sb_2S_5薄膜是用于光电和太阳能电池装置的最佳样品。这项工作提出了一种低成本有前途的化合物，可用于太阳能电池和光伏应用的Sn_2Sb_2S_5薄膜的可扩展合成。

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